Howdy,
Let me introduce myself. I am a research student, new with multisim. And I am looking at the possiblity of using multisim to simulate, initially an equivalnet circuit for a schottky diode. Modelling and fitting real world data to simulated data. With the rationale being that deviations from ideal diode(DC) I-V behaviour that have been observed in real world experimental IV characterisation can be understood and analysed/understood with respect to this simulation. These would likely include parasitic capacitances introducing, some time dependent RC circuits and interface effects. Could multisiim provide me the ability to do a parameter study on this? and similar effects?- The plan would be to cross examine through IV analysis. I am looking for a little hand in realising the potential of multisim in this area, and the approach that should be taken.
I have experimented with the DC oeprating point analysis, and parameter analysis and can see how some of the tools are there- but I'm really interested in creating an environment that will allow me to track these changes, dynamically through I-V representation.
Could someone perhaps provide me with a few pointers in realising this, and point me in the direction of an example that I could experiment with?
I am slightly hampered in circuit design from fundamentals.
many thanks and kind regards,
DC
