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Using NI Labview discrete component measurements, to characterize the VI characteristics of FET and transistors v have fabricated

Using NI Labview discrete component measurements, to characterize the VI characteristics of FET and transistors v have fabricated

‎03-23-2012 12:26 PM

Sir, I m doing research in thin film transistors. Using NI Laabview discrete component measurements, we have characterized the VI characteristics of FET and transistors v have fabricated. Now I want to characterize the same for Double Gate FET. Is it possible in NI? Please help me.

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