I am trying to simulate the transient response of bipolar NPN transistors, such as 2N2222.
If you look at the device model of 2N2222, there are “Ideal forward transit time” (TF=0.325ns) and “Ideal reverse transit time” (TR=100ns). However, if you look at the switching characteristics provided by the manufacturer (ON Semiconductor), the delay time td=10ns, the rise time tr=25 ns, the storage time ts = 225 ns and the fall time tf = 60 ns. How they relates? Is not TR the sum of ts and tf?